Chapter 1 Introduction
1.1 Executive Summary
1.2 Market Definition
1.3 Scope of the Study
Chapter 2 Research Methodology
2.1 Secondary Research
2.2 Primary Research
2.3 Analytic Tools and Model
2.4 Economic Indicator
2.4.1 Base Year, Base Currency, Forecasting Period
2.5 Expert Validation
2.6 Study Timeline
Chapter 3 Market Analysis
3.1 Industry Value Chain Analysis
3.2 Porter's Five Force Analysis
3.2.1 Bargaining Power of Buyers
3.2.2 Bargaining Power of Suppliers
3.2.3 Threats of Substitutes
3.2.4 Threats of New Entrants
3.2.5 Industry Rivalry
3.3 PESTLE Analysis
3.3.1 Political
3.3.2 Economical
3.3.3 Social
3.3.4 Technological
3.3.5 Legal
3.3.6 Environmental
3.4 SWOT Analysis
3.4.1 Strengths
3.4.2 Weakness
3.4.3 Opportunities
3.4.4 Threats
3.5 Y-O-Y Analyses
Chapter 4 Market Dynamics
4.1. Drivers
4.1.1 Increase in Trend of Energy Harvesting Technologies
4.1.2 Rise in demand for Energy -Efficient Battery-Powered Portable Devices
4.1.3 Increase in usage of Renewable Power Sources
4.2 Restraints & Challenges
4.2.1 Slow adoption of new technologies and Innovations
4.2.2 Complex Design for Advanced Technological Devices
4.3 Opportunities
4.3.1 Increase in Demand for Hybrid and Electric Vehicles
4.3.2 Raise in Demand for less carbon emission systems
Chapter 5 Digital Power Electronics Market – By Material
5.1 Introduction
5.2 Sapphire
5.3 Silicon (Si)
5.4 Gallium Nitride(GaN)
5.5 Silicon Carbide(SiC)
5.6 Others
Chapter 6 Digital Power Electronics Market – By Type
6.1 Introduction
6.2 Module
6.2.1 Intelligent Power Module(IPM)
6.2.1.1 Hybrid
6.2.1.2 Monolithic
6.2.2 Power Integrated Module(PIM)
6.2.2.1 Mosfet Modules
6.2.2.2 Insulated Gate Bi-Polar Transistor(IGBT)
6.3 IC
6.3.1 Power Management IC(PMIC)
6.3.2 Application Specific IC(ASIC)
6.4 Discrete
6.4.1 Diode
6.4.1.1 Pin Diode
6.4.1.2 Zener Diode
6.4.1.2 Schottky Diode
6.4.1.3 Light Emitting Diode(LED)
6.4.2 Transistor
6.4.2.1 Field Effect Transistor(FET)
6.4.2.2 Bipolar Junction Transistor(BJT)
6.4.2.3 Insulated Gate Bi-Polar Transistor(IGBT)
6.4.3 Thyristor
6.4.3.1 Mos-Controlled Thyristor(MCT)
6.4.3.2 Gate Turn-Off(GTO) Thyristor
6.4.3.3 Integrated Gate Commutated Thyristor(IGCT)
Chapter 7 Digital Power Electronics Market – By End-user
7.1 Communications
7.2 Computer and Office
7.3 Consumer Electronics
7.4 Industrial
7.5 LED Lighting
7.6 Military/Aerospace
7.7 Others
Chapter 8 Digital Power Electronics Market - By Geography
8.1 Introduction
8.2 North America
8.2.1 U.S
8.2.2 Canada
8.2.3 Mexico
8.3 Europe
8.3.1 U.K.
8.3.2 Germany
8.3.3 France
8.3.4 Italy
8.3.5 Spain
8.3.6. Others
8.4 APAC
8.4.1 China
8.4.2 Japan
8.4.3 India
8.4.4 Australia & New Zealand
8.4.5 South Korea
8.4.6 Others
8.5 South America
8.5.1 Brazil
8.5.2 Argentina
8.5.3 Others
8.6 Middle East & Africa
8.6.1 Middle East
8.6.2 Africa
Chapter 9 Digital Power Electronics Market - Company Profiles
9.1 ABB Group
9.2 Alstom Group
9.3 Dialog Semiconductor PLC
9.4 Exar Corporation
9.5 Fairchild Semiconductor International, Inc.
9.6 Free scale Semiconductor Inc.
9.7 Infineon Technologies
9.8 Integrated Device Technology, Inc.
9.9 Intel Corporation
9.10 International Rectifier Corporation
9.11 Intersil Corporation
9.12 Linear Technology Corporation
9.13 Maxim Integrated Products Inc
9.14 MediaTek Inc.
9.15 Microsemi Corporation
9.16 ON Semiconductor Corporation
9.17 Qualcomm Incorporated
Chapter 10 Digital Power Electronics Market - Competitive Landscape
10.1. Market Share Analysis
10.2. Strategies Adopted by top companies
10.3. Mergers, Acquisitions, Collaborations & Agreements
Chapter 11 Market Insights
11.1. Industry Experts Insights
11.2. Analysts Opinions
11.3. Investment Opportunities
Chapter 12 Appendix
12.1 List of Tables
12.2 List of Figures
