Chapter 1 Introduction
1.1 Executive Summary
1.2 Market Definition
1.3 Scope of the Study
Chapter 2 Research Methodology
2.1 Secondary Research
2.2 Primary Research
2.3 Analytic Tools and Model
2.4 Economic Indicator
2.4.1 Base Year, Base Currency, Forecasting Period
2.5 Expert Validation
2.6 Study Timeline
Chapter 3 Market Analysis
3.1 Industry Value Chain Analysis
3.2Porter's Five Force Analysis
3.2.1 Bargaining Power of Buyers
3.2.2 Bargaining Power of Suppliers
3.2.3 Threats of Substitutes
3.2.4 Threats of New Entrants
3.2.5 Industry Rivalry
3.3 PESTLE Analysis
3.3.1 Political
3.3.2 Economical
3.3.3 Social
3.3.4 Technological
3.3.5 Legal
3.3.6 Environmental
3.4 SWOT Analysis
3.4.1 Strengths
3.4.2 Weakness
3.4.3 Opportunities
3.4.4 Threats
3.5 Y-O-Y Analyses
Chapter 4 Market Dynamics
4.1. Drivers
4.1.1 Growing Demand for Enterprise Storage Applications
4.1.2 Rising Demand for Universal Memory Devices
4.1.3 Need for High Bandwidth, Low Power Consumption, and Highly Scalable Memory Device for Technologies Such as Artificial Intelligence (AI), Internet of Things (IoT), and Big Data
4.2 Restraints
4.2.1 Lack of Stability Under Extreme Environmental Condition
4.2.2 Issues with Storage in Niche Application and High Cost of Emerging Memory Technologies
4.3 Opportunities
4.3.1 Potential for Replacing Flash Memory
4.3.2 Growing Use of Non-volatile Memory in Smartphones
4.3.3 Increasing demand for Emerging Non-volatile Memory in Connected Devices
4.4 Challenges
4.4.1 Higher Design Costs Due to Lack of Standardization
4.4.2 Optimizing Storage Densities and Capacities
Chapter 5 Global Next Generation Memory Market – By Technology
5.1 Introduction
5.2 Non-volatile Memory
5.2.1 Magneto-Resistive Random-Access Memory (MRAM)
5.2.1.1 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM)
5.2.1.2 Toggle Mode MRAM
5.2.2 Ferroelectric RAM (FRAM)
5.2.3 Resistive Random-Access Memory (RERAM)/ Conductive-Bridging RAM (CBRAM)
5.2.4 3D Xpoint (Quantx & Optane)
5.2.5 Nano-RAM (NRAM)
5.2.6 Others (Nano-Bridge, Quantum Dots, Millipede, Molecular, Transparent/Flexible)
5.3 Volatile Memory
5.3.1 Hybrid Memory Cube (HMC)
5.3.2 High-Bandwidth Memory (HBM)
Chapter 6 Global Next Generation Memory Market – By Wafer Size
6.1 Nonvolatile Memory Market, By Wafer Size
6.2 volatile Memory Market, By Wafer Size
6.2.1 200mm
6.2.2 300mm
6.2.3 450mm
Chapter 7 Global Next Generation Memory Market – By Application
7.1 Cache Memory
7.2 Embedded MCU
7.3 Smart Cards
7.4 Mobile Phones
Chapter 8 Global Next Generation Memory Market – By End-User
8.1 Consumer Electronics
8.2 BFSI
8.3 Government
Chapter 9 Global Next Generation Memory Market - By Geography
9.1 Introduction
9.2 North America
9.2.1 U.S.
9.2.2 Canada
9.2.3 Mexico
9.3 Europe
9.3.1 U.K.
9.3.2 Germany
9.3.3 France
9.3.4 Italy
9.3.5 Spain
9.3.6. Rest of Europe
9.4 APAC
9.4.1 China
9.4.2 Japan
9.4.3 India
9.4.4 South Korea
9.4.5 Australia & New Zealand
9.4.6 Rest of APAC
9.5 South America
9.5.1 Brazil
9.5.2 Argentina
9.5.3 Others
9.6 Middle East & Africa
9.6.1 Middle East
9.6.2 Africa
Chapter 10 Global Next Generation Memory Market - Company Profiles
10.1 Samsung Electronics
10.2 Toshiba Corporation
10.3 Intel Corporation
10.4 IBM Corporation
10.5 Adesto Technologies
10.6 Micron Technology Inc
10.7 Cypress Semiconductor Corporation
10.8 SanDisk Corporation
10.9 Everspin Technologies
10.10 Crossbar Inc
10.11 ASUS
10.12 Corsair Memory
10.13 Kingston Technologies
10.14 Wind bond Electronics Corporation
10.15 Avalanche Technologies Inc
10.16 SK Hynix Inc.
10.17 Transcend
10.18 Corsair Memory
10.19 Fujitsu
10.20 NXP Semiconductor
Chapter 11 Global Next Generation Memory Market - Competitive Landscape
11.1. Market Share Analysis
11.2. Strategies Adopted by top companies
11.3. Mergers, Acquisitions, Collaborations & Agreements
Chapter 12 Market Insights
12.1. Industry Experts Insights
12.2. Analysts Opinions
12.3. Investment Opportunities
Chapter 13 Appendix
13.1 List of Tables
13.2 List of Figures
