North America Silicon Carbide Semiconductor Market – Growth & Forecast (2024 – 2032)

SiC & AIN semiconductors, 3C-SIC growth on Si substrates, IV-IV silicon carbide semiconductors, 6h-SIC semiconductors, 4H-SIC semiconductors, 2H-SIC semiconductors, 3C-SIC semiconductors, 3C- SIC growth in hexagonal SIC substrates. By wafer size, silicon carbide is segmented into 2-inch, 4-inch, 6 inches and above 6 inches. Above 6 Inch segment is estimated to have the remarkable growth owing to the rising water.

As above 6-inch SIC helps the manufacturing of any number of devices when compared to other silicon carbide wafers. Application segment includes electronic combat system, flexible Ac transmission systems (Facts), power grid device, industrial motor drive, solar energy, lighting control, high-voltage, direct Current (HVCD), flame detector, RF device & cellular base station, EV charging, EV motor drive, wind energy, power supply and inverter and others.

RF device and the cellular base station is estimated to grow at a fair pace during the forecasting period. As these semiconductors are mostly used in these applications followed by power supply applications. Based on end-user, silicon carbide market end-user segment is further divided into telecommunication, power electronics, automotive, defence, renewable power generation, energy & power and Others. Power electronics held the largest share in 2017 and estimated to grow at a moderate CAGR during the forecast period. The key factor for the growth of Power electronics is major growth in usage of SIC devices in inverter and power supply applications. Americas held second largest share as the usage of these silicon carbides in telecommunications and electronic applications.

North America Silicon Carbide Semiconductor Market Trends:

• CoolSiC MOSFET 1200V is launched by the Infineon

technologies which are the leading-edge solution helps in bringing the designs towards unattainable efficiency and power density levels.

Silicon carbide Power MOSFET 1200 V main features of this product include remarkably low on-resistance per unit area and very good switching performance.

SIC Schottky barrier diode was launched by Rohm semiconductor which supports high-speed switching and low-temperature dependence.

Wolfspeed’s CGH60008D which offers greater power density and wider bandwidths compared to Si and GaAs transistors.

North America Silicon Carbide Semiconductor Market Research Report:

An executive summary condensing the whole report such that essential authority can rapidly twist up doubtlessly acquainted with brief overview and conclusion.

To have complete market analysis, industry value chain analysis, Porter’s Five Force Analysis, PESTLE, SWOT analysis, and Y-o-Y analysis were carried to understand the market more comprehensively.

Regional and global diversity is analysed with the major countries and the unions. Scrutinizing the revenue generation on Year-On-Year

Identifying DROC in the current market and their impact in altering the market dynamics.

Competitive landscape analysis to identify the mergers and acquisitions which will have a comparative financial analysis with major competitors.

Expertise investment opportunities by an analyst to the individual and organisation to have a better foothold in the market.

• Infineon Technologies AG
• STMicroelectronics N.V.
• Rohm Semiconductor
• Cree Inc.
• On Semiconductor
• Fuji Electric Co., Ltd.

Along with these companies, there were many other companies considered/cited in the report while analysing the North America Silicon Carbide Semiconductor market. These companies hold substantial share-owning to the nature of the industry whereas rest of the market shares are marginal chunks to regional and local level manufacturers. Other players have considerable presence owing to its robust brand image, geographical reach and strong customer base.