Chapter 1 Introduction
1.1 Executive Summary
1.2 Market Definition
1.3 Scope of the Study
Chapter 2 Research Methodology
2.1 Secondary Research
2.2 Primary Research
2.3 Analytic Tools and Model
2.4 Economic Indicator
2.4.1 Base Year, Base Currency, Forecasting Period
2.5 Expert Validation
2.6 Study Timeline
Chapter 3 Market Analysis
3.1 Industry Value Chain Analysis
3.2Porter's Five Force Analysis
3.2.1 Bargaining Power of Buyers
3.2.2 Bargaining Power of Suppliers
3.2.3 Threats of Substitutes
3.2.4 Threats of New Entrants
3.2.5 Industry Rivalry
3.3 Pestle Analysis
3.3.1 Political
3.3.2 Economical
3.3.3 Social
3.3.4 Technological
3.3.5 Legal
3.3.6 Environmental
3.4 SWOT Analysis
3.4.1 Strengths
3.4.2 Weakness
3.4.3 Opportunities
3.4.4 Threats
3.5 Y-O-Y Analyses
Chapter 4 Market Dynamics
4.1. Drivers
4.1.1 Reduction in the size of semiconductors
4.1.2 Ability of SIC to work in high temperature and high voltages
4.1.3 Augmenting demand for the usage of SIC-based in the motor is accelerating SIC-based
devices
4.1.4 Widespread applications of SIC devices in RF and cellular base station
4.2 Restraints
4.2.1 SIC is getting to compete with Gan
4.3 Opportunities
4.3.1 Rising utilization of power semiconductor technology in renewable energy
generation
4.3.2 Growth in electromobility
4.4 Challenges
4.4.1 SIC power devices packaging
Chapter 5 North America Silicon Carbide Semiconductor Market – By Device
5.1 SIC power semiconductor
5.2 SIC Bare Die
Chapter 6 North America Silicon Carbide Semiconductor Market – By Technology
6.1. III-V SIC Semiconductors
6.2. SiC & GaN semiconductors
6.3. SiC & AIN semiconductors
6.4. 3C-SIC Growth on Si Substrates
6.5. IV-IV Silicon Carbide Semiconductors
6.6. 6h-SIC Semiconductors
6.7. 4H-SIC Semiconductors
6.8.2H-SIC Semiconductors
6.9. 3C-SIC Semiconductors
6.10. 3C- SIC Growth in Hexagonal SIC Substrates
Chapter 7 North America Silicon Carbide Semiconductor Market - By Wafer size
7.1 2 Inch
7.2 4 Inch
7.3 6 Inch
7.4 Above 6 Inch
Chapter 8 North America Silicon Carbide Semiconductor Market - By Applications
8.1 Introduction
8.2 Electronic Combat System
8.3 Flexible Ac Transmission Systems (Facts)
8.4 Power Grid Device
8.5 Industrial Motor Drive
8.6 Solar Energy
8.7 Lighting Control
8.8 High-Voltage, Direct Current (HVCD)
8.9 Flame Detector
8.10 RF Device & Cellular Base Station
8.11 EV Charging
8.12 EV Motor Drive
8.13 Wind Energy
8.14 Power Supply and Inverter
8.15 Others
Chapter 9 North America Silicon Carbide Semiconductor Market - By End-User
9.1 Introduction
9.2 Telecommunication
9.3 Power Electronics
9.4 Automotive
9.5 Defense
9.6 Renewable Power Generation
9.7 Energy & Power
9.8 Others
Chapter 10 North America Silicon Carbide Semiconductor Market - By Geography
10.1 Introduction
10.2 North America
10.2.1 U.S.
10.2.2 Canada
10.2.3 Mexico
Chapter 11 North America Silicon Carbide Semiconductor Market - Company Profiles
11.1 Infineon Technologies AG
11.2 STMicroelectronics N.V.
11.3 Rohm Semiconductor
11.4 Cree Inc.
11.5 On Semiconductor
11.6 Fuji Electric Co., Ltd.
11.7 General Electric
11.8 Monolith Semiconductor Inc.
11.9 United Silicon Carbide, Inc.
11.10 Renesas Electronics Corporation
11.11 Genesic Semiconductor Inc.
11.12 Basic 3C, Inc.
11.13 Toshiba Corporation
11.14 Microsemi Corporation
11.15 Vishay Intertechnology Incorporated
11.16 Saint-Gobain
11.17 Elmet
Chapter 12 North America Silicon Carbide Semiconductor Market - Competitive Landscape
12.1. Market Share Analysis
12.2. Strategies Adopted by top companies
12.3. Mergers, Acquisitions, Collaborations & Agreements
Chapter 13 Market Insights
13.1. Industry Experts Insights
13.2. Analysts Opinions
13.3. Investment Opportunities
Chapter 14 Appendix
14.1 List of Tables
14.2 List of Figures
